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Observation of near interface oxide traps in single crystalline on Si(111) by quasistatic method
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10.1063/1.2976325
/content/aip/journal/apl/93/8/10.1063/1.2976325
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976325
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Frequency dependent characteristics of single crystalline on Si(111) substrate with Pt as top electrode. Typical quasistatic plot and high-frequency plot at the frequencies of and are observed, respectively.

Image of FIG. 2.
FIG. 2.

Capacitance-voltage characteristics at of single crystalline on Si(111) substrate with Pt as top electrode and its corresponding simulated low frequency curve. The inset represents hysteresis characteristics of single crystalline on Si(111) substrate with Pt as top electrode at the frequency of .

Image of FIG. 3.
FIG. 3.

(a) The voltage-dependant effective trap capacitance density associated with and NIOT. NIOT is estimated to be at . (b) Energy distribution of the interface trap density in the lower bandgap of silicon substrate. Interface trap density in the condition is estimated to be .

Image of FIG. 4.
FIG. 4.

Equivalent parallel conductance estimated from measured conductance as a function of frequency at . The interface state density extracted is in the level of .

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/content/aip/journal/apl/93/8/10.1063/1.2976325
2008-08-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976325
10.1063/1.2976325
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