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Frequency dependent characteristics of single crystalline on Si(111) substrate with Pt as top electrode. Typical quasistatic plot and high-frequency plot at the frequencies of and are observed, respectively.
Capacitance-voltage characteristics at of single crystalline on Si(111) substrate with Pt as top electrode and its corresponding simulated low frequency curve. The inset represents hysteresis characteristics of single crystalline on Si(111) substrate with Pt as top electrode at the frequency of .
(a) The voltage-dependant effective trap capacitance density associated with and NIOT. NIOT is estimated to be at . (b) Energy distribution of the interface trap density in the lower bandgap of silicon substrate. Interface trap density in the condition is estimated to be .
Equivalent parallel conductance estimated from measured conductance as a function of frequency at . The interface state density extracted is in the level of .
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