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Thermal gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing
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10.1063/1.2976327
/content/aip/journal/apl/93/8/10.1063/1.2976327
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976327
/content/aip/journal/apl/93/8/10.1063/1.2976327
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/content/aip/journal/apl/93/8/10.1063/1.2976327
2008-08-26
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal SiO2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976327
10.1063/1.2976327
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