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Thermal gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing
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10.1063/1.2976327
/content/aip/journal/apl/93/8/10.1063/1.2976327
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976327
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction spectrum for the sample after forming gas annealing. The inset is the electron diffraction pattern for the sample.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image focusing on the interface between oxide and Ge layer on Si substrate.

Image of FIG. 3.
FIG. 3.

XPS Si spectrum of the oxide on Ge layer. The inset shows the EDS analysis at the location of (a) top oxide, (b) interfacial oxide, and (c) Si substrate.

Image of FIG. 4.
FIG. 4.

Capacitance-voltage characteristics measured between 500 and for the Ge MOS capacitor. The dielectric constant is extracted to be 3.98 from the capacitance in the accumulation regime. The inset displays the corresponding hysteresis quantified by flatband voltage shift from voltage sweep.

Image of FIG. 5.
FIG. 5.

Current-voltage characteristic for the Ge MOS capacitor and the inset is the plot for ln vs .

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/content/aip/journal/apl/93/8/10.1063/1.2976327
2008-08-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal SiO2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976327
10.1063/1.2976327
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