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X-ray diffraction spectrum for the sample after forming gas annealing. The inset is the electron diffraction pattern for the sample.
Cross-sectional TEM image focusing on the interface between oxide and Ge layer on Si substrate.
XPS Si spectrum of the oxide on Ge layer. The inset shows the EDS analysis at the location of (a) top oxide, (b) interfacial oxide, and (c) Si substrate.
Capacitance-voltage characteristics measured between 500 and for the Ge MOS capacitor. The dielectric constant is extracted to be 3.98 from the capacitance in the accumulation regime. The inset displays the corresponding hysteresis quantified by flatband voltage shift from voltage sweep.
Current-voltage characteristic for the Ge MOS capacitor and the inset is the plot for ln vs .
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