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TMR ratio as a function of annealing temperature for PSV MTJs having electrodes with and . The MgO thickness of the MTJs is except for the open circles .
(a) Lattice parameter as a function of the annealing temperature for two structure samples with substrate/MgO(10) (open squares, open triangles, and filled triangles) and substrate/Ta(5)/Ru(10)/Ta(5)//MgO(10) (open circles and filled circles). (b) FWHM in the rocking curves of MgO as a function of the annealing temperature for substrate/MgO(10).
Cross-sectional HRTEM images for PSV MTJs (a) after annealing at and (b) after annealing at . (c) EDX line profiles of Ta composition after annealing at 400, 475, and for substrate/Ta(5)/Ru(10)/Ta(5)//Ta(5)/Ru(5) stack structure.
Annealing temperature dependence of (a) TMR ratio, (b) normalized resistance area products ( in parallel magnetization configuration and in antiparallel magnetization configuration) measured at for the PSV MTJs with three different bottom thicknesses, , 4.3, and . (c) Magnetoresistance loop at of the PSV MTJ annealed at . TMR ratio is as high as 604% at .
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