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Tunnel magnetoresistance of 604% at by suppression of Ta diffusion in pseudo-spin-valves annealed at high temperature
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10.1063/1.2976435
/content/aip/journal/apl/93/8/10.1063/1.2976435
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976435
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TMR ratio as a function of annealing temperature for PSV MTJs having electrodes with and . The MgO thickness of the MTJs is except for the open circles .

Image of FIG. 2.
FIG. 2.

(a) Lattice parameter as a function of the annealing temperature for two structure samples with substrate/MgO(10) (open squares, open triangles, and filled triangles) and substrate/Ta(5)/Ru(10)/Ta(5)//MgO(10) (open circles and filled circles). (b) FWHM in the rocking curves of MgO as a function of the annealing temperature for substrate/MgO(10).

Image of FIG. 3.
FIG. 3.

Cross-sectional HRTEM images for PSV MTJs (a) after annealing at and (b) after annealing at . (c) EDX line profiles of Ta composition after annealing at 400, 475, and for substrate/Ta(5)/Ru(10)/Ta(5)//Ta(5)/Ru(5) stack structure.

Image of FIG. 4.
FIG. 4.

Annealing temperature dependence of (a) TMR ratio, (b) normalized resistance area products ( in parallel magnetization configuration and in antiparallel magnetization configuration) measured at for the PSV MTJs with three different bottom thicknesses, , 4.3, and . (c) Magnetoresistance loop at of the PSV MTJ annealed at . TMR ratio is as high as 604% at .

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/content/aip/journal/apl/93/8/10.1063/1.2976435
2008-08-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976435
10.1063/1.2976435
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