1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nonpolar grown on with reduced stacking fault density realized by persistent layer-by-layer growth
Rent:
Rent this article for
USD
10.1063/1.2976559
/content/aip/journal/apl/93/8/10.1063/1.2976559
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976559
/content/aip/journal/apl/93/8/10.1063/1.2976559
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/93/8/10.1063/1.2976559
2008-08-28
2014-09-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonpolar 4H-AlN grown on 4H-SiC(11¯00) with reduced stacking fault density realized by persistent layer-by-layer growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976559
10.1063/1.2976559
SEARCH_EXPAND_ITEM