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Nonpolar grown on with reduced stacking fault density realized by persistent layer-by-layer growth
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10.1063/1.2976559
/content/aip/journal/apl/93/8/10.1063/1.2976559
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976559
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of (a) a substrate and (b) a 4-nm-(16-layer-)thick epilayer. Pairs of arrows in both images show steps of height. In (b), 2D islands (denoted by “1”) and steps originating from SiC substrate steps (denoted by “2”) are visible.

Image of FIG. 2.
FIG. 2.

Intensity of a specular RHEED diffraction streak for the (0001) azimuth as a function of AlN growth time. Oscillations continue for over 100 cycles.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of a interface under (a) low-magnification and (b) high-resolution conditions. A schematic of the SF structure is shown in (c).

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/content/aip/journal/apl/93/8/10.1063/1.2976559
2008-08-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonpolar 4H-AlN grown on 4H-SiC(11¯00) with reduced stacking fault density realized by persistent layer-by-layer growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976559
10.1063/1.2976559
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