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(a) RHEED intensity during deposition of anatase film on (001) substrate. Arrows indicate intensity oscillations, with a period corresponds to two layers. (a) AFM image of a film, thick, measured before the deposition of a perovskite overlayer ( field of view). (b) XRD patterns for a bilayer film composed of 54 nm thick and 16 nm thick .
Temperature dependence of (a) resistivity, (b) carrier density, and (c) Hall mobility for 16 nm thick film capped by a 1 u.c. layer (open circle), by a 20 u.c. layer (open square), by a 1 u.c. layer (closed circle), and by a 20 u.c. layer (closed square). In (a), the data for a 16 nm thick film are also shown.
The overlayer thickness dependence of the resistivity of 16 nm thick for (open symbol) and (closed symbol) at 10 K (square and dotted line) and 300 K (circle and line).
(a) XRD patterns for a film capped by 3, 50, and 100 u.c. layers. (b) XRD patterns for a film capped by 3, 50, and 100 u.c. layers.
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