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High output power GaN-based light-emitting diodes using an electrically reverse-connected -Schottky diode and superlattice
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10.1063/1.2977471
/content/aip/journal/apl/93/8/10.1063/1.2977471
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2977471
/content/aip/journal/apl/93/8/10.1063/1.2977471
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/content/aip/journal/apl/93/8/10.1063/1.2977471
2008-08-29
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2977471
10.1063/1.2977471
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