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High output power GaN-based light-emitting diodes using an electrically reverse-connected -Schottky diode and superlattice
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10.1063/1.2977471
/content/aip/journal/apl/93/8/10.1063/1.2977471
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2977471
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Figures

Image of FIG. 1.
FIG. 1.

[(a) and (b)] Cross-sectional schematic and electrically equivalent circuit of normal LED and SD-SL LED. Unlike the normal LED, -SD (like diode) is electrically reverse connected to the LED for the SD-SL LED. (c) Possible current injection path of the normal LED and (d) that of the SD-SL LED if the resistance of -SD is assumed to be much higher during the forward operation.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of Cr/Al Schottky contacts on .

Image of FIG. 3.
FIG. 3.

Forward current-voltage characteristics of the normal LED and SD-SL LED. The inset shows the behavior at voltage ranges from 2.5 to 3.0 V.

Image of FIG. 4.
FIG. 4.

Output power-current characteristics of the normal LED and SD-SL LED.

Image of FIG. 5.
FIG. 5.

Plots at drop rate of output power in the normal LED and SD-SL LED. Dashed lines are theoretical results using Eq. (1).

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/content/aip/journal/apl/93/8/10.1063/1.2977471
2008-08-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2977471
10.1063/1.2977471
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