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Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high- gate stacks
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10.1063/1.2967442
/content/aip/journal/apl/93/9/10.1063/1.2967442
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2967442
/content/aip/journal/apl/93/9/10.1063/1.2967442
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/content/aip/journal/apl/93/9/10.1063/1.2967442
2008-09-02
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2967442
10.1063/1.2967442
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