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Realization of write-once-read-many-times memory devices based on poly(-vinylcarbazole) by thermally annealing
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10.1063/1.2975157
/content/aip/journal/apl/93/9/10.1063/1.2975157
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2975157
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Figures

Image of FIG. 1.
FIG. 1.

Typical characteristic of an annealed ITO/PVK/Al by sweeping the voltage from zero to maximum value and then back to zero on a semilogarithmic scale. The inset shows the currents of ON and OFF states measured continuously as a function of time for the annealed ITO/PVK/Al under a constant bias of 1.0 V.

Image of FIG. 2.
FIG. 2.

Comparison of the characteristics of the devices based on the annealed and unannealed PVK.

Image of FIG. 3.
FIG. 3.

Analysis of characteristics for the annealed ITO/PVK/Al device in (a) ON and (b) OFF states.

Image of FIG. 4.
FIG. 4.

AFM morphology and phase images of PVK films on ITO. Among (a) and (c) are morphology and phase images of the annealed PVK and (b) and (d) are morphology and phase images of the unannealed PVK.

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/content/aip/journal/apl/93/9/10.1063/1.2975157
2008-09-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2975157
10.1063/1.2975157
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