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Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy
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10.1063/1.2975374
/content/aip/journal/apl/93/9/10.1063/1.2975374
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2975374
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the sample fabricated and studied, (b) topography constant force AFM scan of AlN, (c) characteristic study performed on bare AlN (inset: FN analysis), and (d) current vs bias data for different bias scan ranges.

Image of FIG. 2.
FIG. 2.

(a) Constant force topographic AFM scan of ZnO surface. Current images obtained with (b) , (c) and (d) .

Image of FIG. 3.
FIG. 3.

(a) characteristic study performed on the ZnO/AlN/Si(100) sample (inset: force-distance curve), (b) FN analysis performed on the curve, (c) variation in percentage coverage area with respect to applied bias, and (d) variation in current with respect to force. The red line is the theoretical fit using the Hertzian model.

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/content/aip/journal/apl/93/9/10.1063/1.2975374
2008-09-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2975374
10.1063/1.2975374
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