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Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy
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10.1063/1.2975374
/content/aip/journal/apl/93/9/10.1063/1.2975374
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2975374
/content/aip/journal/apl/93/9/10.1063/1.2975374
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/content/aip/journal/apl/93/9/10.1063/1.2975374
2008-09-05
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2975374
10.1063/1.2975374
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