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Probe-test curves at 78 K for unpassivated and passivated pixel-size diodes.
(a) CS HAADF-STEM image of the interface SL, where the inset shows the EDX line scan of one of the As precipitates. (b) High resolution TEM image of the sidewall of the mesa.
EELS spectra taken from the sidewall of the mesa in the spots showed in the HAADF-STEM image in the inset of (a) Si and (b) O contributions, respectively.
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