1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Atomic scale analysis of the effect of the passivation treatment on InAs/GaSb superlattice mesa sidewall
Rent:
Rent this article for
USD
10.1063/1.2977589
/content/aip/journal/apl/93/9/10.1063/1.2977589
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2977589
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Probe-test curves at 78 K for unpassivated and passivated pixel-size diodes.

Image of FIG. 2.
FIG. 2.

(a) CS HAADF-STEM image of the interface SL, where the inset shows the EDX line scan of one of the As precipitates. (b) High resolution TEM image of the sidewall of the mesa.

Image of FIG. 3.
FIG. 3.

EELS spectra taken from the sidewall of the mesa in the spots showed in the HAADF-STEM image in the inset of (a) Si and (b) O contributions, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/93/9/10.1063/1.2977589
2008-09-03
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2977589
10.1063/1.2977589
SEARCH_EXPAND_ITEM