1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
Rent:
Rent this article for
USD
10.1063/1.2977865
/content/aip/journal/apl/93/9/10.1063/1.2977865
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2977865
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Linear transfer curve of TFTs as a function of stress time . The inset shows the bias-stress-induced shift of curve. The sweep was done at in both curves.

Image of FIG. 2.
FIG. 2.

Time dependence of for gate bias stresses. The measured data are well fitted with a stretched-exponential equation with a characteristic trapping time of and a stretched-exponential exponent of 0.42. The inset shows that the measured is also well fitted with a stretched-exponential equation.

Image of FIG. 3.
FIG. 3.

Time dependence of under different gate bias stresses. The inset shows the extracted under different bias stresses.

Image of FIG. 4.
FIG. 4.

(a) Time dependence of under different stress temperatures. (b) Characteristic trapping time as a function of reciprocal temperature. is thermally activated with an average effective energy barrier of 0.53 eV. The inset shows the values of as a function of temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/93/9/10.1063/1.2977865
2008-09-02
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2977865
10.1063/1.2977865
SEARCH_EXPAND_ITEM