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Linear transfer curve of TFTs as a function of stress time . The inset shows the bias-stress-induced shift of curve. The sweep was done at in both curves.
Time dependence of for gate bias stresses. The measured data are well fitted with a stretched-exponential equation with a characteristic trapping time of and a stretched-exponential exponent of 0.42. The inset shows that the measured is also well fitted with a stretched-exponential equation.
Time dependence of under different gate bias stresses. The inset shows the extracted under different bias stresses.
(a) Time dependence of under different stress temperatures. (b) Characteristic trapping time as a function of reciprocal temperature. is thermally activated with an average effective energy barrier of 0.53 eV. The inset shows the values of as a function of temperature.
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