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Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals
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10.1063/1.2978069
/content/aip/journal/apl/93/9/10.1063/1.2978069
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2978069
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The PL decays at different wavelengths (gray traces). The solid black line is the TA decay with pump at and probe at for sample A. The inset shows the fitting parameters of the sum of a single exponential decay and a stretched exponential decay ( and ). (b) The absorption cross section obtained with pump at and probe at 400 and for samples A, B, and C. Sample C has also been probed at . The dash curve is the FCA fit based on the Drude model. The inset shows the linearity of photoinduced absorption change at the pump and probe wavelength of for all the samples.

Image of FIG. 2.
FIG. 2.

(a) PLE spectrum with detection wavelength at for sample A (square) and PLE spectrum with detection wavelength at for sample B (circle), along with the PL spectrum from sample B. The PL was excited at with optical power. (b) Normalized TA decays with probe at for sample A and B, and at for sample D. The inset shows the PL decay of sample A and B at . The solid lines are the fits to the data using a biexponential model convoluted with the systems response.

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/content/aip/journal/apl/93/9/10.1063/1.2978069
2008-09-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2978069
10.1063/1.2978069
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