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BS sample imaged with a scanning electron microscope. Left: black silicon: right: damaged sample.
Experimental setup. Left: BS emitter in quasitransmission; middle: quasireflection geometry; right: possible photon paths.
Terahertz electric field for different surface qualities: black, damaged, unpolished (sawed), and polished.
Angle dependent terahertz emission in quasitransmission geometry. Inset: terahertz output of BS and InAs for different pump polarizations, both plots normalized.
Terahertz output of BS for different angles in quasireflection. Inset: pump power dependence of the terahertz emission.
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