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Improved effective mass theory for silicon nanostructures
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10.1063/1.2978196
/content/aip/journal/apl/93/9/10.1063/1.2978196
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2978196
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Conduction band for a [100] infinite Si nanowire with main caracteristics. The transverse dimension of the squared cross-sectional nanowire is .

Image of FIG. 2.
FIG. 2.

First energy level predicted by the analytical model [Eq. (9)] in an infinite Si well (a), nanowire (b), and a Si quantum dot (c) with terms of the second (dotted line) and fourth (solid line) order compared with the tight-binding results in Ref. 11. Curve (d) shows the second energy level in the nanowire (relevant for electron transport).

Image of FIG. 3.
FIG. 3.

Transport effective mass of Eq. (13) predicted by the analytical model in an infinite Si nanowire with term of the fourth order (solid line) compared with the tight-binding results in Ref. 11.

Image of FIG. 4.
FIG. 4.

Position of the minimum of the band predicted by the analytical model [Eq. (3)] in an infinite Si nanowire and well with term of the fourth order (solid line) compared with the tight-binding results in Ref. 11 (square).

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/content/aip/journal/apl/93/9/10.1063/1.2978196
2008-09-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved effective mass theory for silicon nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2978196
10.1063/1.2978196
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