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Anisotropic optical gain in -plane multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates
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10.1063/1.2978242
/content/aip/journal/apl/93/9/10.1063/1.2978242
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2978242
/content/aip/journal/apl/93/9/10.1063/1.2978242
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/content/aip/journal/apl/93/9/10.1063/1.2978242
2008-09-04
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic optical gain in m-plane InxGa1−xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/9/10.1063/1.2978242
10.1063/1.2978242
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