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Hydrogen sensing properties of a metamorphic high electron mobility transistor
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10.1063/1.3052698
/content/aip/journal/apl/94/1/10.1063/1.3052698
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3052698
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical drain-source current-voltage characteristics of the studied Pd/InAlAs MEMT hydrogen sensor under different hydrogen gases at 303 K.

Image of FIG. 2.
FIG. 2.

Maximum transconductance and threshold voltage as a function of hydrogen concentration.

Image of FIG. 3.
FIG. 3.

Dynamic response curves of the studied Pd/InAlAs MHEMT hydrogen sensor upon exposing to different gases.

Image of FIG. 4.
FIG. 4.

Logarithmic value of the ratio between and vs the square root of hydrogen partial pressure at 363 K.

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/content/aip/journal/apl/94/1/10.1063/1.3052698
2009-01-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen sensing properties of a metamorphic high electron mobility transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3052698
10.1063/1.3052698
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