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Reducing the critical current for spin-transfer switching of perpendicularly magnetized nanomagnets
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10.1063/1.3058680
/content/aip/journal/apl/94/1/10.1063/1.3058680
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3058680

Figures

Image of FIG. 1.
FIG. 1.

Differential resistance as a function of perpendicular-to-plane applied field at zero current [(a) and (b)] and dc bias current for zero net external field, (c) for a 45 nm diameter nanopillar measured at room temperature.

Image of FIG. 2.
FIG. 2.

Sum of the differential resistances measured while sweeping the dc bias current from to −1 mA and from −1 to . To eliminate Joule and Peltier effects [see Fig. 1(c)] the parabolic background signal was subtracted.

Image of FIG. 3.
FIG. 3.

Field variation in the switching currents at 300 K (open symbols) and 20 K (solid symbols). Squares and circles correspond to transitions and reversals , respectively.

Tables

Generic image for table
Table I.

Properties for nanopillar 1 (studied in the present letter) and nanopillar 2 from Ref. 10: is the free layer volume, its coercive field, and is the critical current for reversal of the free layer.

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/content/aip/journal/apl/94/1/10.1063/1.3058680
2009-01-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing the critical current for spin-transfer switching of perpendicularly magnetized nanomagnets
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3058680
10.1063/1.3058680
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