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Schematic of the process flow for transferring photodiodes onto Si based on ion cut and selective chemical etching.
Current-voltage characteristics of photodiodes before and after transfer (semilog scale): (a) dark current in the forward bias region, (b) dark and photocurrents in the reverse bias region. Inset: optical microscopic image on a local area of the finished photodiodes on Si [see Fig. 1(f)], showing the ring-shaped -type metal contacts on the top surface of the mesa structures.
Hall measurements results on the structures after transfer and annealing at .
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