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Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP photodiodes transferred on silicon
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10.1063/1.3062848
/content/aip/journal/apl/94/1/10.1063/1.3062848
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3062848

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the process flow for transferring photodiodes onto Si based on ion cut and selective chemical etching.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of photodiodes before and after transfer (semilog scale): (a) dark current in the forward bias region, (b) dark and photocurrents in the reverse bias region. Inset: optical microscopic image on a local area of the finished photodiodes on Si [see Fig. 1(f)], showing the ring-shaped -type metal contacts on the top surface of the mesa structures.

Tables

Generic image for table
Table I.

Hall measurements results on the structures after transfer and annealing at .

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/content/aip/journal/apl/94/1/10.1063/1.3062848
2009-01-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3062848
10.1063/1.3062848
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