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Controlling high-mobility conduction in by oxide thin film deposition
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10.1063/1.3063026
/content/aip/journal/apl/94/1/10.1063/1.3063026
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3063026
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Equilibrium concentration of oxygen vacancies as a function of the inverse of the temperature of reduced STO single crystals heat treated in reduced atmosphere. The data are taken from annealing experiments (annealed crystals in Table I of Ref. 5). The open symbol indicates the equilibrium value of obtained for our thin film deposited samples.

Image of FIG. 2.
FIG. 2.

(a) Dependence of carrier density on the film deposition time . (b) Electronic mobility vs for the same samples. Blue symbols are for LAO films and red ones for CoLSTO. Labeled data refer to samples of Fig. 3: the “in situ annealed” sample is represented by open symbols.

Image of FIG. 3.
FIG. 3.

SdH oscillations of as-grown 20 and 200 nm thick CoLSTO films on STO and in situ annealed 20 nm thick CoLSTO on STO measured at .

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/content/aip/journal/apl/94/1/10.1063/1.3063026
2009-01-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling high-mobility conduction in SrTiO3 by oxide thin film deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3063026
10.1063/1.3063026
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