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Single electron charging in deterministically positioned InAs/InP quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM micrograph of four Schottky metallic gates precisely positioned around an InP pyramidal nanotemplate used to control the QD nucleation site. (b) Schematic view of device indicating a single InAs QD embedded in the intrinsic region (InP) of an Schottky diode. A 20 nm layer of is used between the top Schottky gates and -doped InP substrate to minimize leakage current. (c) Typical single-dot PL from device structure shown in (a), which emits around 830 meV (1500 nm).

Image of FIG. 2.
FIG. 2.

Typical PL spectra for an individual, prepositioned InAs/InP QD as a function of vertical electric field (reverse bias). Single electron control is demonstrated by discrete changes in the optical spectra. For this particular dot, the electron number can be tuned from a QD containing two electrostatically induced electrons to an empty dot, where the PL probes only that of . The intensity of the lower emission peak is multiplied by a factor of three.

Image of FIG. 3.
FIG. 3.

Stark shift of (black squares) and (blue circles) as a function of vertical electric field. Here, the is offset by a constant energy. From a quadratic fit of the data (solid black line), the built-in dipole and Stark shift are obtained. The size and direction of the built-in dipole indicate that the InAs QD composition is uniform.

Image of FIG. 4.
FIG. 4.

Fine structure at fixed bias for , , and , respectively. The FSS of is and of is , while no detectable FSS is observed for as expected.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single electron charging in deterministically positioned InAs/InP quantum dots