banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Single-parameter quantized charge pumping in high magnetic fields
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Pumped current normalized by vs the variation in the dc voltage applied to gate 2, . The inset shows a schematic of the device, with the dashed arrow indicating the direction of the pumped electrons. S and D indicate source and drain contacts. (b) in arbitrary units as a function of applied -field and . The number of electrons pumped per cycle is specified in the figure. The measurements were performed in device 1 at , base temperature of , and power of .

Image of FIG. 2.
FIG. 2.

Pumped current at through device 2 as a function of and . In (a) no magnetic field was applied. The dotted line indicates the transition above which the emission of electrons to the drain is not complete and smaller than the number of loaded electrons . In (b) the pumped current is shown when a perpendicular-to-plane field of was applied.

Image of FIG. 3.
FIG. 3.

Pumped current normalized by at through device 2 vs the variation in the dc voltage applied to gate 2, , at fixed . In (a) no field was applied, while (b) shows the characteristic for . The gate characteristic was fitted using Eq. (3) together with the following parameters: for zero field (a), , , while for the measurements at , (b) the values , , and were used.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single-parameter quantized charge pumping in high magnetic fields