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A schematic of the suggested process for fabrication of polymer-based FETs. (a) SAM is formed over thin film. (b) Irradiation through mask, leading to degradation of the monolayer at irradiated areas (c). (d) The FET contacts are formed by self-localization of water-based conducting polymer (such as PEDOT) at the irradiated areas and the final step would be the deposition of a semiconducting polymer (such as P3HT).
Optical microscope images of source and drain electrodes in an interpenetrating configuration. Electrodes are made of spin-coated self-localized PEDOT on top of a substrate. (a) channel. (b) channel. (c) An example of overcoverage due to exposure under humid conditions (50% RH). (d) An example for insufficient coverage due to exposure under too low humidity conditions (17% RH).
Current-voltage characteristics of a FET fabricated using the described process. Channel length and width are 8 and , respectively. (a) Output characteristics. (b) Transfer characteristics in the linear and saturation regimes. The inset shows the linear fit to the square root of the drain current at .
Contact angle measurements of FDDTS based SAM over thin film deposited on silicon.
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