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Deep ultraviolet and near infrared photodiode based on -silicon nanowire heterojunction fabricated at low temperature
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10.1063/1.3064161
/content/aip/journal/apl/94/1/10.1063/1.3064161
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3064161
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The schematic illustration of cross-sectional view of photodiode. Photon window area is . (b) The side view of SEM image of SiNW arrays.

Image of FIG. 2.
FIG. 2.

(a) characteristics of the heterojunction photodiode under different temperatures from 333 to 243 K. The inset shows current densities and reverse voltage properties under different temperatures from 333 to 243 K. (b) Log-log plots of current density vs forward-bias voltage under 333 and 303 K.

Image of FIG. 3.
FIG. 3.

Current densities reverse-bias voltage curves under different light intensities. The inset shows forward current densities and voltage properties under different light intensities.

Image of FIG. 4.
FIG. 4.

Photoresponsivity vs light wavelength. The inset shows photoresponsivity in the wavelength range of 600–1000 nm.

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/content/aip/journal/apl/94/1/10.1063/1.3064161
2009-01-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3064161
10.1063/1.3064161
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