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Pt/Co/oxide and oxide/Co/Pt electrodes for perpendicular magnetic tunnel junctions
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10.1063/1.3064162
/content/aip/journal/apl/94/1/10.1063/1.3064162
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3064162
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Hall resistance as a function of perpendicular applied field for structures after different annealing treatments for cobalt thicknesses of (a) 0.6 and (b) 1.5 nm. The inset in (b) is a zoom of the curve measured after annealing at .

Image of FIG. 2.
FIG. 2.

Anisotropy field as a function of annealing temperature for different structures, Ox standing for either naturally oxidized Al or Mg (squares and triangles), or plasma oxidized Al (diamonds), or rf-sputtered MgO (circles). Positive anisotropy fields correspond to out-of-plane Co magnetization.

Image of FIG. 3.
FIG. 3.

Hall resistance as a function of perpendicular applied field after annealing at of (a) and (b) structures. The alumina barrier was formed by plasma oxidation, whereas the MgO one was obtained by natural oxidation. Both major (open symbols) and minor (filled symbols) hysteresis loops are represented.

Image of FIG. 4.
FIG. 4.

Hall resistance as a function of perpendicular applied field after annealing at of (filled symbols) and (open symbols) electrodes. The MgO layer was obtained by rf-sputtering of MgO.

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/content/aip/journal/apl/94/1/10.1063/1.3064162
2009-01-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pt/Co/oxide and oxide/Co/Pt electrodes for perpendicular magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3064162
10.1063/1.3064162
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