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Hall resistance as a function of perpendicular applied field for structures after different annealing treatments for cobalt thicknesses of (a) 0.6 and (b) 1.5 nm. The inset in (b) is a zoom of the curve measured after annealing at .
Anisotropy field as a function of annealing temperature for different structures, Ox standing for either naturally oxidized Al or Mg (squares and triangles), or plasma oxidized Al (diamonds), or rf-sputtered MgO (circles). Positive anisotropy fields correspond to out-of-plane Co magnetization.
Hall resistance as a function of perpendicular applied field after annealing at of (a) and (b) structures. The alumina barrier was formed by plasma oxidation, whereas the MgO one was obtained by natural oxidation. Both major (open symbols) and minor (filled symbols) hysteresis loops are represented.
Hall resistance as a function of perpendicular applied field after annealing at of (filled symbols) and (open symbols) electrodes. The MgO layer was obtained by rf-sputtering of MgO.
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