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High resolution fluorescence imaging of damage regions in ion implanted channel waveguides
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10.1063/1.3064164
/content/aip/journal/apl/94/1/10.1063/1.3064164
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3064164
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) False color microscope image of the cross section of the implanted channel waveguide. (b) Microluminescence spectrum of the fundamental emission of ions in the crystal. Inset shows the energy levels of neodymium ions related to this emission band.

Image of FIG. 2.
FIG. 2.

(a) Spatial dependence of the emission intensity of the ion implantation induced spectral shift (b) and broadening of the emission line. In (a) the dashed line indicates the spatial location of the NDR.

Image of FIG. 3.
FIG. 3.

In-depth dependence of the ion implantation induced spectral shift in the emission line of ions as obtained from (a) low-dose medium-mass and (b) high-dose light ion implanted waveguides.

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/content/aip/journal/apl/94/1/10.1063/1.3064164
2009-01-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High resolution fluorescence imaging of damage regions in H+ ion implanted Nd:MgO:LiNbO3 channel waveguides
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3064164
10.1063/1.3064164
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