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Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control
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10.1063/1.3068489
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Affiliations:
1 Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, Illinois 61801, USA
a) Electronic mail: hanthen2@uiuc.edu.
b) Electronic mail: mfeng@uiuc.edu.
Appl. Phys. Lett. 94, 013509 (2009)
/content/aip/journal/apl/94/1/10.1063/1.3068489
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View: Figures

## Figures

FIG. 1.

Charge analysis of the base minority carrier density of a TL illustrating the continuity condition applied to the minority carrier population number at the base QW active region. The arrows , , and denote the flow of minority carriers (electrons).

FIG. 2.

Plot of vs of the TL in Ref. 6. To obtain the data points (, ), the bias conditions (, ) are varied with the BC junction in usual reverse bias. The least-squares fit to Eq. (6) (solid line) yields the values and (unitless).

FIG. 3.

(a) Plot of the calculated differential optical gain vs current gain of a TL (see Ref. 6) using Eq. (5) and the experimental values , , , (emitter width of ), and steady-state conditions with , and . (b) TL measured optical response (see Ref. 6) and the corresponding calculated response for (1) the dc bias case of no auxiliary ac bias signal, (2) the reference ac bias case assuming in the model no gain trade-off, and (3) the ac bias case of the differential optical gain enhanced with auxiliary biasing and gain trade-off.

/content/aip/journal/apl/94/1/10.1063/1.3068489
2009-01-09
2014-04-16

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