Full text loading...
Transistor characteristics of a high performance -MOSFET with 200 nm undoped channel and 10 Å Si IPL: (a) characteristics, (b) characteristics, and (c) gate to channel capacitance, total .
(a) Si IPL thickness dependence on EOT and SS. Si IPL of 5–10 Å shows the lowest SS. (b) Si IPL thickness dependence on transconductance and drive current. Optimal thickness of 10 Å provides the best performance.
(a) Measurement configuration of pulsed technique. (b) Threshold voltage shift and transconductance measured by pulse for transistors with various Si IPL thicknesses.
Si IPL thickness dependence of effective channel mobility. Optimal thickness of 10 Å shows highest mobility .
Article metrics loading...