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A high performance metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
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10.1063/1.3068752
/content/aip/journal/apl/94/1/10.1063/1.3068752
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3068752
/content/aip/journal/apl/94/1/10.1063/1.3068752
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/content/aip/journal/apl/94/1/10.1063/1.3068752
2009-01-09
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3068752
10.1063/1.3068752
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