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A high performance metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
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10.1063/1.3068752
/content/aip/journal/apl/94/1/10.1063/1.3068752
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3068752
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transistor characteristics of a high performance -MOSFET with 200 nm undoped channel and 10 Å Si IPL: (a) characteristics, (b) characteristics, and (c) gate to channel capacitance, total .

Image of FIG. 2.
FIG. 2.

(a) Si IPL thickness dependence on EOT and SS. Si IPL of 5–10 Å shows the lowest SS. (b) Si IPL thickness dependence on transconductance and drive current. Optimal thickness of 10 Å provides the best performance.

Image of FIG. 3.
FIG. 3.

(a) Measurement configuration of pulsed technique. (b) Threshold voltage shift and transconductance measured by pulse for transistors with various Si IPL thicknesses.

Image of FIG. 4.
FIG. 4.

Si IPL thickness dependence of effective channel mobility. Optimal thickness of 10 Å shows highest mobility .

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/content/aip/journal/apl/94/1/10.1063/1.3068752
2009-01-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/1/10.1063/1.3068752
10.1063/1.3068752
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