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Radiative transitions in P- and B-doped silicon nanocrystals
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10.1063/1.3081629
/content/aip/journal/apl/94/10/10.1063/1.3081629
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3081629
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Atomic configuration of the pure Si NC investigated in this work, where the Si and H atoms are displayed in yellow and white, respectively. (b) Schematic representation of the impurity at five different sites within the NC, departing from the center to the NC surface. (c) Three-level model for the radiative recombination in NCs doped with a single impurity. Electrons have two available decay processes. They can experience a direct conduction-to-valence band transition or decay via the impurity state. As B (P) is an acceptor (donor) impurity, the impurity state is near the valence (conduction) band. (d) First few Kohn–Sham states for each NC configuration. The dotted lines represent the HOMO and LUMO states of the undoped NC.

Image of FIG. 2.
FIG. 2.

Dependence of the radiative lifetimes , , and on the impurity position of B- and P-doped Si NCs with 1.6 nm of diameter. The dashed line indicates the radiative lifetime in a pure NC. In this figure, we defined and

Image of FIG. 3.
FIG. 3.

Dependence of the main oscillator strengths on the impurity position of B- and P-doped Si NCs with 1.6 nm of diameter. The dashed line indicates the oscillator strength in a pure NC.

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/content/aip/journal/apl/94/10/10.1063/1.3081629
2009-03-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radiative transitions in P- and B-doped silicon nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3081629
10.1063/1.3081629
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