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Observation of back-surface reflected luminescence in GaAs excited by ultrashort pulses
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10.1063/1.3093670
/content/aip/journal/apl/94/10/10.1063/1.3093670
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3093670
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL temporal evolution and spectrum (inset) from GaAs at room temperature following 800 nm excitation and 880 nm detection. The solid curve is a fit using Eq. (1). Zero time delay is defined as laser excitation.

Image of FIG. 2.
FIG. 2.

PL evolution of GaAs at 20 K excited at 920 nm (below the band gap) and detected at 980 nm at various excitation intensities. The traces have been displaced vertically for clarity. Zero time delay is defined as laser excitation.

Image of FIG. 3.
FIG. 3.

PL evolution of InGaAs/GaAs QDs at 20 K excited by 800 nm and detected at 960 nm. At higher excitation intensities a sharp peak is observed at a time delay of 12 ps and another weak peak can be observed at a time delay of 23 ps. Zero time delay is defined as laser excitation.

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/content/aip/journal/apl/94/10/10.1063/1.3093670
2009-03-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of back-surface reflected luminescence in GaAs excited by ultrashort pulses
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3093670
10.1063/1.3093670
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