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Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells
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1.
1.N. S. Sariciftci, L. Smilowitz, A. J. Heeger, and F. Wudl, Science 258, 1474 (1992).
http://dx.doi.org/10.1126/science.258.5087.1474
2.
2.J. Y. Kim, K. Lee, N. E. Coates, D. Moses, T. Q. Nguyen, M. Dante, and A. J. Heeger, Science 317, 222 (2007).
http://dx.doi.org/10.1126/science.1141711
3.
3.Y. Kinoshita, T. Hasobe, and H. Murata, Appl. Phys. Lett. 91, 083518 (2007).
http://dx.doi.org/10.1063/1.2775085
4.
4.C. F. Zhang, S. W. Tong, C. Y. Jiang, E. T. Kang, D. S. H. Chan, and C. X. Zhu, Appl. Phys. Lett. 93, 043307 (2008).
http://dx.doi.org/10.1063/1.2962986
5.
5.M. Y. Chan, S. L. Lai, M. K. Fung, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 90, 023504 (2007).
http://dx.doi.org/10.1063/1.2430783
6.
6.J. G. Dai, X. X. Jiang, H. B. Wang, and D. H. Yan, Appl. Phys. Lett. 91, 253503 (2007).
http://dx.doi.org/10.1063/1.2824836
7.
7.K. Colladet, S. Fourier, T. J. Cleij, L. Lutsen, J. Gelan, D. Vanderzande, L. H. Nguyen, H. Neugebauer, N. S. Sariciftci, A. Aguirre, G. Janssen, and E. Goovaerts, Macromolecules 40, 65 (2007).
http://dx.doi.org/10.1021/ma061760i
8.
8.C. F. Zhang, S. W. Tong, C. Y. Jiang, E. T. Kang, D. S. H. Chan, and C. X. Zhu, Appl. Phys. Lett. 92, 083310 (2008).
http://dx.doi.org/10.1063/1.2885721
9.
9.W. L. Ma, C. Y. Yang, X. Gong, K. Lee, and A. J. Heeger, Adv. Funct. Mater. 15, 1617 (2005).
http://dx.doi.org/10.1002/adfm.200500211
10.
10.B. P. Rand, D. P. Burk, and S. R. Forrest, Phys. Rev. B 75, 115327 (2007).
http://dx.doi.org/10.1103/PhysRevB.75.115327
11.
11.M. C. Scharber, D. Wuhlbacher, M. Koppe, P. Denk, C. Waldauf, A. J. Heeger, and C. J. Brabec, Adv. Mater. (Weinheim, Ger.) 18, 789 (2006).
http://dx.doi.org/10.1002/adma.200501717
12.
12.C. J. Brabec, S. E. Shaheen, C. Winder, and N. S. Saricifci, Appl. Phys. Lett. 80, 1288 (2002).
http://dx.doi.org/10.1063/1.1446988
13.
13.E. Ahlswede, J. Hanisch, and M. Powalla, Appl. Phys. Lett. 90, 163504 (2007).
http://dx.doi.org/10.1063/1.2723077
14.
14.L. H. Nguyen, H. Hoppe, T. Erb, S. Gunes, G. Gobsch, and N. S. Sariciftci, Adv. Funct. Mater. 17, 1071 (2007).
http://dx.doi.org/10.1002/adfm.200601038
15.
15.P. H. Nguyen, S. Scheinert, S. Berleb, W. Bruttin, and G. Paasch, Org. Electron. 2, 105 (2001).
http://dx.doi.org/10.1016/S1566-1199(01)00017-9
16.
16.E. Ahlswede, J. Hanisch, and M. Powalla, Appl. Phys. Lett. 90, 063513 (2007).
http://dx.doi.org/10.1063/1.2472719
17.
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Image of FIG. 1.

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FIG. 1.

(a) characteristics of typical solar cells with e-beam deposited Al cathode and thermal evaporated Al cathode as fabricated and after annealing at for 10 min. (b) Statistical results of for the both types of solar cells after annealing at for 10 min.

Image of FIG. 2.

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FIG. 2.

(a) characteristics of devices with the e-beam evaporated Al cathode that have undergone the thermal annealing from room temperature to for 10 min. (b) Statistical results of under different annealing temperatures. is increased steadily with the increase in the annealing temperature until it begins to saturate when the temperature is above .

Image of FIG. 3.

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FIG. 3.

(a) Dark characteristics of typical P3HT:PCBM solar cells with e-beam deposited Al cathode and thermal evaporated Al cathode as fabricated and after annealing at for 10 min. (b) Dark characteristics of P3HT and PCBM single layer devices with e-beam deposited Al cathode as fabricated and after annealing at for 10 min.

Image of FIG. 4.

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FIG. 4.

Schematics illustrating the effects of deep interface hole traps on the polymer-fullerene solar cell. Red region means P3HT domain, and blue region means PCBM domain. E-beam deposited Al cathode induces deep hole traps at P3HT/Al interface, and these positive trapped holes will induce the negative image charges in the cathode and thus forms the dipoles.

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/content/aip/journal/apl/94/10/10.1063/1.3093831
2009-03-12
2014-04-18

Abstract

A significant increase in open circuit voltage is obtained in the polymer-fullerene bulk heterojunction solar cell by using the e-beam deposited Al cathode. Compared with the device with the thermal evaporated Al cathode, an obvious enhancement of from 596 to 664 mV is obtained, which makes the overall device power conversion efficiency improved by 12.4% (from 3.79% to 4.26%). Electrical characterizations suggest that the energetic particles in the e-beam deposition induce deep interface hole traps in the poly(3-hexylthiophene-2,5-diyl) (P3HT), while leaving the fullerene unaffected. The deep trapped holes near the P3HT/cathode interface can induce the image negative charges in the cathode and thus form “dipoles.” These dipoles lead to the lowering of the Al effective work function and cause the enhancement of .

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Scitation: Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3093831
10.1063/1.3093831
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