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Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells
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/content/aip/journal/apl/94/10/10.1063/1.3093831
2009-03-12
2014-11-23

Abstract

A significant increase in open circuit voltage is obtained in the polymer-fullerene bulk heterojunction solar cell by using the e-beam deposited Al cathode. Compared with the device with the thermal evaporated Al cathode, an obvious enhancement of from 596 to 664 mV is obtained, which makes the overall device power conversion efficiency improved by 12.4% (from 3.79% to 4.26%). Electrical characterizations suggest that the energetic particles in the e-beam deposition induce deep interface hole traps in the poly(3-hexylthiophene-2,5-diyl) (P3HT), while leaving the fullerene unaffected. The deep trapped holes near the P3HT/cathode interface can induce the image negative charges in the cathode and thus form “dipoles.” These dipoles lead to the lowering of the Al effective work function and cause the enhancement of .

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Scitation: Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3093831
10.1063/1.3093831
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