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Spontaneous transition in preferred orientation of GaN domains grown on -plane sapphire substrate from to [0001]
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10.1063/1.3097009
/content/aip/journal/apl/94/10/10.1063/1.3097009
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3097009
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Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of (a) as-grown and (b) annealed GaN layer on -sapphire, as a function of thickness. X-ray wavelength was 1.5406 Å.

Image of FIG. 2.
FIG. 2.

SEM images of surface morphologies for as-grown [(a)–(c)] and annealed [(d)–(f)] samples with layer thicknesses of 310, 470, and 670 nm, respectively. An inset in (e) is a surface for subsequent HTG GaN on the sample shown in (e). (g) PL spectra measured at 4 K for the samples shown in (f) and shown as an inset in (e), respectively. (h) XRD intensity of a -thick GaN grown at on the sample shown in (f).

Image of FIG. 3.
FIG. 3.

Schematic diagrams show how -oriented GaN domain can be grown on -oriented GaN. The faces with the same colors imply that they are parallel with each other. Starting wurtzite GaN domain is labeled as WZ. (a) GaN in zinc blende phase (labeled as ZB1) is grown on the {0001} plane of GaN WZ with a stacking fault at the interface. (b) GaN in zinc blende phase (labeled as ZB2) is grown on {111} plane of GaN ZB1 with an inversion domain boundary at the interface. (c) GaN in zinc blende phase (labeled as ZB3) is grown on {111} plane of GaN ZB2 with an inversion domain boundary at the interface. The bottom {111} plane of GaN ZB3 is now almost parallel with -plane of the starting domain of GaN WZ.

Image of FIG. 4.
FIG. 4.

An atomistic model viewed along direction of the second domain ZB1. Due to the existence of dangling bonds, a void is formed between ZB1 and ZB3.

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/content/aip/journal/apl/94/10/10.1063/1.3097009
2009-03-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [112¯0] to [0001]
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/10/10.1063/1.3097009
10.1063/1.3097009
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