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Direct observation of the charge carrier concentration in organic field-effect transistors by electron spin resonance
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Charge carrier concentration in operating field-effect transistor(FET) of regioregular poly(3-hexylthiophene) has been directly determined by electron spin resonance(ESR).ESR signals of field-induced polarons are observed around under the application of negative gate-source voltage . Upon applying drain-source voltage , ESR intensity decreases linearly in the low region, reaching to about 50% of the initial intensity at the pinch-off point . For larger absolute values of , it becomes nearly independent. These behaviors are well explained by the change in the carrier concentration obtained by the FET theory using gradual channel approximation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation of the charge carrier concentration in organic field-effect transistors by electron spin resonance