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Schematic heterostructure of Schottky diode for capacitance-voltage measurements grown by MBE. Insets show AFM image of InAs QRs and calculated electron energy states.
Capacitance-voltage measurement data from QR heterostructures. The electron and hole ground state energies obtained from the analysis of these data are in good agreement with calculated values.
(a) Heterostructure schematic of QRID grown by MBE. The inset depicts one period of the QR layer together with double barrier resonant tunneling heterostructure. (b) Measured temperature-dependent dark current as a function of bias.
Calibrated spectral responsivity of resonant tunneling QRIDs measured at (a) 5, (b) 80, and (c) 120 K.
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