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Observation of stacking faults formed during homoepitaxial growth of -type
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10.1063/1.3089697
/content/aip/journal/apl/94/11/10.1063/1.3089697
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3089697
/content/aip/journal/apl/94/11/10.1063/1.3089697
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/content/aip/journal/apl/94/11/10.1063/1.3089697
2009-03-19
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3089697
10.1063/1.3089697
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