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Observation of stacking faults formed during homoepitaxial growth of -type
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10.1063/1.3089697
/content/aip/journal/apl/94/11/10.1063/1.3089697
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3089697
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The AFM and SEM images of Al-doped epitaxial layers grown under TMA partial pressures of (a) , (b) , (c) 0.001, and (d) 0.0014 Torr.

Image of FIG. 2.
FIG. 2.

(a) The low-magnitude bright-field image and [(b) and (c)] high-resolution lattice images of the most heavily Al-doped epitaxial layer using HVTEM (partial pressure of TMA was 0.002 Torr) [(b) shows the bottom part of the epitaxial layer and (c) shows the upper part of the epitaxial layer].

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/content/aip/journal/apl/94/11/10.1063/1.3089697
2009-03-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3089697
10.1063/1.3089697
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