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High magnetoresistance tunnel junctions with Mg–B–O barriers and Ni–Fe–B free electrodes
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10.1063/1.3095595
/content/aip/journal/apl/94/11/10.1063/1.3095595
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3095595
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

CIPT measurements of MTJ structures showing dependence of TMR vs RA on annealing for (a) all- electrodes, (b) all- electrodes, (c) structures, and (d) structures. Each sample has been measured before (squares) and after annealing to 250 (circles), 300 (up triangles), and (down triangles) as labeled.

Image of FIG. 2.
FIG. 2.

STS measurements of MgO and Mg–B–O layers deposited on films, before (black solid lines) and after (red dotted lines) annealing to . The EBD MgO layer (a) shows the presence of low energy states down to the Fermi level (0 V) and little change in the band gap after annealing. The rf-sputtered Mg–B–O layer (b) shows few low energy states before annealing with a conduction band offset of , and a dramatic decrease in the band gap after annealing, with a conduction band offset of .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of as-grown (a) and MTJs (b), and after annealing to [(c) and (d)]. Insets: CBED patterns from the electrode [inset in (c)] and from the electrode [inset in (d)] after annealing.

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/content/aip/journal/apl/94/11/10.1063/1.3095595
2009-03-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High magnetoresistance tunnel junctions with Mg–B–O barriers and Ni–Fe–B free electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3095595
10.1063/1.3095595
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