Full text loading...
CIPT measurements of MTJ structures showing dependence of TMR vs RA on annealing for (a) all- electrodes, (b) all- electrodes, (c) structures, and (d) structures. Each sample has been measured before (squares) and after annealing to 250 (circles), 300 (up triangles), and (down triangles) as labeled.
STS measurements of MgO and Mg–B–O layers deposited on films, before (black solid lines) and after (red dotted lines) annealing to . The EBD MgO layer (a) shows the presence of low energy states down to the Fermi level (0 V) and little change in the band gap after annealing. The rf-sputtered Mg–B–O layer (b) shows few low energy states before annealing with a conduction band offset of , and a dramatic decrease in the band gap after annealing, with a conduction band offset of .
Cross-sectional TEM images of as-grown (a) and MTJs (b), and after annealing to [(c) and (d)]. Insets: CBED patterns from the electrode [inset in (c)] and from the electrode [inset in (d)] after annealing.
Article metrics loading...