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Nonvolatile memories using deep traps formed in by metal ion implantation
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10.1063/1.3097799
/content/aip/journal/apl/94/11/10.1063/1.3097799
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3097799
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram showing the calculated impurity energy levels for V and Nb doped . (b) Photoconductivity spectra of HE memory cells containing V or Nb ions.

Image of FIG. 2.
FIG. 2.

hysteresis loops of LE memory cells containing V ions of fluences. The inset shows memory window as a function of fluence.

Image of FIG. 3.
FIG. 3.

P/E characteristics of HE memory cells containing V and Nb ions of and fluences.

Image of FIG. 4.
FIG. 4.

Retention characteristics of HE memory cells containing V and Nb ions of fluence.

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/content/aip/journal/apl/94/11/10.1063/1.3097799
2009-03-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memories using deep traps formed in Al2O3 by metal ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3097799
10.1063/1.3097799
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