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Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys
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View: Figures


Image of FIG. 1.
FIG. 1.

The 10 K PL spectra of Tm-doped alloys with laser excitation at . Respective band gaps are indicated by thick solid (red) arrows in each panel.

Image of FIG. 2.
FIG. 2.

The temperature evolution of the PL spectra of measured from 10–250 K for excitation at .

Image of FIG. 3.
FIG. 3.

Arrhenius plots of the integrated PL intensity of (a) 298 nm and (b) 358 nm emissions for alloy in the temperature range between 10 to 250 K. The solid lines are best fits to the experimental data. The fitted values of the activation energy are indicated in the panels.

Image of FIG. 4.
FIG. 4.

Schematic diagram of the RESI trap levels in alloys as functions of Al content . The black squares are obtained from the present experiment and Ref. 24. The red circles are data from Refs. 15 and 21. Dotted lines are guides to the eyes for RESI traps (I) and (II). The inset shows the excitation process involving the RESI trap (II) and the , , and states of a ion in alloy.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys