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Spatially resolved doping concentration measurement in semiconductors via spin noise spectroscopy
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10.1063/1.3098074
/content/aip/journal/apl/94/11/10.1063/1.3098074
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3098074
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measurement setup. The insert shows a sketch of the -GaAs sample stack moved inside the focused Gaussian laser beam. The two steplike doping concentrations of the sample stack are and .

Image of FIG. 2.
FIG. 2.

Spin noise difference spectrum for measured at . The focus of the laser beam is centered in the middle of the sample stack. The dotted and dashed lines show the contributions of the low doped sample (a) and the high doped sample (b) as determined by the spin noise model (dash-dotted line).

Image of FIG. 3.
FIG. 3.

Depth resolved measurement of the GaAs sample stack with SNS. The dotted and dashed lines depict depth resolved fits to the integrated noise power according to Eq. (1). The -axis has been scaled with the index of refraction of GaAs and the origin has been set to the center of sample A.

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/content/aip/journal/apl/94/11/10.1063/1.3098074
2009-03-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatially resolved doping concentration measurement in semiconductors via spin noise spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3098074
10.1063/1.3098074
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