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XRD scan of 100 nm crystallized amorphous Ge on Si(111). An intense and narrow Ge (111) diffraction peak is observed, indicating high crystal quality. The presence of fringes indicates a smooth Ge surface and interface between Ge and Si.
XRD scan of 100 nm crystallized amorphous Ge on Si(001). A Ge (004) diffraction peak is observed, which is less intense and broader than the Ge (111) peak on Si(111). This indicates that crystallization on Si(001) leads to less good crystal quality than on Si(111).
XRD phi scans of skew-symmetric reflections of Ge (202) and Si (202) from 100 nm Ge on Si(111). The Ge and Si scans are overlaid. The Si diffraction peaks are repeated every 120°, whereas the Ge diffraction peaks are repeated every 60°. The Ge diffraction peaks in between the Si diffraction peaks indicate the presence of Ge twins.
Comparison of charge mobility for 90 nm crystallized Ge on Si(111) and bulk Ge(001) (Ref. 20) and Si(001) (Ref. 21) for electron and hole concentrations of, respectively, and .
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