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Metallization induced by nitrogen atom adsorption on silicon nanofilms and nanowires
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10.1063/1.3098455
/content/aip/journal/apl/94/11/10.1063/1.3098455
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3098455
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The geometry and band structures of Si thin films with nitrogen adsorption: (a) side view, (b) top view, and (c) band structures. The Si, H, and N atoms are denoted by green, white, and blue, respectively. The isosurfaces are 35% of the maximum of the density. The Fermi level is set at zero.

Image of FIG. 2.
FIG. 2.

The PDOS of atoms for Si thin film and SiNWs with nitrogen adsorption: the dotted line shows the PDOS for the orbit, the solid line for the orbit, and the dashed line for the orbit. The Fermi level is set at zero.

Image of FIG. 3.
FIG. 3.

The PDOS of atoms for SiNWs with nitrogen adsorption. The solid line shows the PDOS for the silicon atom in the (110) side facet and the dotted line for the silicon atom in the (100) side facet. The Fermi level is set at zero.

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/content/aip/journal/apl/94/11/10.1063/1.3098455
2009-03-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metallization induced by nitrogen atom adsorption on silicon nanofilms and nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3098455
10.1063/1.3098455
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