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Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon
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10.1063/1.3099001
/content/aip/journal/apl/94/11/10.1063/1.3099001
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3099001
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Figures

Image of FIG. 1.
FIG. 1.

EBSD (a), EBIC [(b) and (c)], and corresponding monochromatic CL [(d)–(g)] images of SA-GBs in mc-Si. The EBIC images were taken at 300 and 100 K. The monochromatic CL images were taken at 0.812 eV (1530 nm), 0.875 eV (1425 nm), 0.934 eV (1333 nm), and 1.000 eV (1240 nm) at 20 K.

Image of FIG. 2.
FIG. 2.

Classification of the contrasts of EBIC and D-lines with respect to the misorientation angle of SA-GBs. The general SA-GBs (1°–1.5°) give the lines D3 and D4, with no obvious EBIC contrast at 300 K, while the special SA-GBs (2°–2.5°) give the lines D1 and D2, with strong EBIC contrast at 300 K.

Image of FIG. 3.
FIG. 3.

TEM images of boundary dislocations at a general SA1° (a) and a special SA2.5° (b) in high purity mc-Si.

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/content/aip/journal/apl/94/11/10.1063/1.3099001
2009-03-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3099001
10.1063/1.3099001
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