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EBSD (a), EBIC [(b) and (c)], and corresponding monochromatic CL [(d)–(g)] images of SA-GBs in mc-Si. The EBIC images were taken at 300 and 100 K. The monochromatic CL images were taken at 0.812 eV (1530 nm), 0.875 eV (1425 nm), 0.934 eV (1333 nm), and 1.000 eV (1240 nm) at 20 K.
Classification of the contrasts of EBIC and D-lines with respect to the misorientation angle of SA-GBs. The general SA-GBs (1°–1.5°) give the lines D3 and D4, with no obvious EBIC contrast at 300 K, while the special SA-GBs (2°–2.5°) give the lines D1 and D2, with strong EBIC contrast at 300 K.
TEM images of boundary dislocations at a general SA1° (a) and a special SA2.5° (b) in high purity mc-Si.
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