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(a) Schematic illustration of the transfer printing process using a structured stamp. (b) Top view SEM image of a representative stamp of this type. (c) Cross-sectional SEM image of the stamp.
Velocity-dependent adhesive strength of structured PDMS stamps with different contact areas. (a) Three curves representing the cases of 100% (squares; flat stamp), 60% (circles; line and space stamp), and 40% (triangles; line and space stamp) contact areas. The peel direction in all cases was perpendicular to the surface relief structures. Error bars represent the standard deviation in delamination velocity for each applied load. (b) Common adhesion curve for all stamps measured.
[(a)–(c)] Left panel: top view optical images of arrays of 300 nm thick Si ribbons transfer printed onto a glass substrate by the PDMS stamps shown in the right panels. Contact areas for the stamps are: (a) 100% (flat surface), (b) 60% (line/space relief), and (c) 44% (line/space relief). Scale bars for all ribbon array images is and for stamp images is . (d) Printing yield as a function of the contact area between structured PDMS stamps and Si ribbons.
(a) Photograph of a 300 nm thick phosphorus-doped silicon membrane printed onto a glass substrate without an adhesion layer. (b) Optical images of an array of single-crystal silicon TFTs fabricated on this membrane with a gate dielectric layer (100 nm thick) and source, drain and gate electrodes of Cr/Au (3/100 nm). (c) Full current-voltage and transfer (source/drain ) characteristics of devices with channel lengths and widths of 25 and , respectively.
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