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Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves
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10.1063/1.3099341
/content/aip/journal/apl/94/11/10.1063/1.3099341
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3099341
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Showing the (a) experimental setup, (b) total time-resolved pump-probe optical response of the undamaged and damaged samples, and (c) the subtracted oscillatory responses displaying strong amplitude modulation observed in the damaged sample in the first 400 ps, as compared to the undamaged response.

Image of FIG. 2.
FIG. 2.

(a) Difference in oscillatory amplitudes between irradiated sample and undamaged samples, with comparison to the simulated peak defect concentration (solid black curve). (b) Experimental dependence of peak amplitude modulation vs peak defect concentration as predicted from TRIM calculations. This dependence may be used to transform raw data in (a) into absolute defect concentration profiles.

Image of FIG. 3.
FIG. 3.

(a) Experimental defect concentration profile for a sample irradiated at 325 keV at a dosage of . Peak defect concentration observed to be near , agreeing well with simulated profiles for total damage (black) and helium ion distribution (red, enhanced 25×) from TRIM code. (b) Experimentally measured defect profiles before (blue) and after (red) 2 h of thermal annealing at .

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/content/aip/journal/apl/94/11/10.1063/1.3099341
2009-03-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3099341
10.1063/1.3099341
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