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XRD patterns of a sample after annealing at 750, 850, and .
Temperature dependence of the specific contact resistance (solid curve), measured by TLM, as well as the nanometric back-to-front resistance (dashed curve), measured by C-AFM.
Current distribution obtained by C-AFM over an area of , after RTA at 750 and , showing a decidedly increased uniformity after annealing at .
The trends of the inverse of the effective contact area (dotted curve) and the local back-to-front resistance measured by C-AFM (solid curve) as a function of annealing temperature. The inset shows the statistical distribution of current, from which the effective area percentage was calculated, after RTA at .
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