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Improved contacts by effective contact area and conductivity increases at the nanoscale
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10.1063/1.3099901
/content/aip/journal/apl/94/11/10.1063/1.3099901
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3099901
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of a sample after annealing at 750, 850, and .

Image of FIG. 2.
FIG. 2.

Temperature dependence of the specific contact resistance (solid curve), measured by TLM, as well as the nanometric back-to-front resistance (dashed curve), measured by C-AFM.

Image of FIG. 3.
FIG. 3.

Current distribution obtained by C-AFM over an area of , after RTA at 750 and , showing a decidedly increased uniformity after annealing at .

Image of FIG. 4.
FIG. 4.

The trends of the inverse of the effective contact area (dotted curve) and the local back-to-front resistance measured by C-AFM (solid curve) as a function of annealing temperature. The inset shows the statistical distribution of current, from which the effective area percentage was calculated, after RTA at .

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/content/aip/journal/apl/94/11/10.1063/1.3099901
2009-03-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved Ni/3C-SiC contacts by effective contact area and conductivity increases at the nanoscale
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3099901
10.1063/1.3099901
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