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Composite structure comprising of a QW and an adjacent InAs self-organized QD. Two schematic bands of the type-II QW with the strain-modulated band edge, perpendicular and parallel to the growth direction are also depicted.
PL spectra of (a) InAs QD control sample, (b) QW control sample, (c) the composite structure with 10 nm spacer, and (d) the composite structure with 5 nm spacer. The measurements were performed at 19 K with an excitation level of .
Cross-sectional TEM image of the composite structure with 5 nm GaAs spacer.
PL peak energies relevant to the modulated QWs as functions of excitation power density of the two composite structures. For comparison, the peak energies of the InAs QD control sample and the QW control sample are also depicted.
Temperature-dependent PL spectra of (a) the composite structure with 5 nm spacer and (b) the QW control sample. The excitation level for these measurements is .
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