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type-II quantum well with an adjacent InAs quantum-dot stressor layer
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10.1063/1.3100191
/content/aip/journal/apl/94/11/10.1063/1.3100191
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3100191
/content/aip/journal/apl/94/11/10.1063/1.3100191
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/content/aip/journal/apl/94/11/10.1063/1.3100191
2009-03-16
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3100191
10.1063/1.3100191
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