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Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes
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10.1063/1.3100197
/content/aip/journal/apl/94/11/10.1063/1.3100197
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3100197
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of dielectrophoretic assembly. An ac voltage of 5 V at 300 kHz is applied to the source (S) electrode while the conducting Si substrate is monitored by an oscilloscope. (b) AFM image of a section of a device after assembly. (c) Cartoon for electronic transport measurements setup.

Image of FIG. 2.
FIG. 2.

A representative plot of drain current vs source-drain voltage for three sequential breakdowns (first, second, and third break) for (a) a bottom contacted and (b) a top contacted device (c) vs back gate voltage at constant of −0.5 V after the assembly and each breakdown (top to bottom of figure) for the bottom contacted device. (d) vs after assembly and each breakdown (top to bottom of figure) for top contacted device. (e) vs after third breakdown at different of −0.5, −1.0, and −1.5 V for the same device as in (c). The on-off ratio for this device is . (f) Output characteristics for the top contact device presented in (d) after third breakdown.

Image of FIG. 3.
FIG. 3.

Plot of on-off ratios and corresponding mobility for all measured devices after each breakdown in (a) bottom contact and (b) top contact configuration.

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/content/aip/journal/apl/94/11/10.1063/1.3100197
2009-03-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3100197
10.1063/1.3100197
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