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(a) Schematic of dielectrophoretic assembly. An ac voltage of 5 V at 300 kHz is applied to the source (S) electrode while the conducting Si substrate is monitored by an oscilloscope. (b) AFM image of a section of a device after assembly. (c) Cartoon for electronic transport measurements setup.
A representative plot of drain current vs source-drain voltage for three sequential breakdowns (first, second, and third break) for (a) a bottom contacted and (b) a top contacted device (c) vs back gate voltage at constant of −0.5 V after the assembly and each breakdown (top to bottom of figure) for the bottom contacted device. (d) vs after assembly and each breakdown (top to bottom of figure) for top contacted device. (e) vs after third breakdown at different of −0.5, −1.0, and −1.5 V for the same device as in (c). The on-off ratio for this device is . (f) Output characteristics for the top contact device presented in (d) after third breakdown.
Plot of on-off ratios and corresponding mobility for all measured devices after each breakdown in (a) bottom contact and (b) top contact configuration.
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