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GaN quantum dots as optical transducers for chemical sensors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of the sample structure and the optical path for the PL measurements. (b) High-resolution transmission electron micrograph of a QD stack viewed along the axis.

Image of FIG. 2.
FIG. 2.

Low-temperature and room temperature PL spectra of a five-layers QDSL as a function of external bias (in steps of ).

Image of FIG. 3.
FIG. 3.

(a) Evolution of the PL intensity and the photocurrent with bias. (b) Sketch of the band diagram of a three-layer structure based on simulations illustrating the current transport due to tunneling of photoexcited carriers. Negative external bias leads to a reduction of the effective tunneling barrier thickness due to the displacement of electron and hole wave functions.

Image of FIG. 4.
FIG. 4.

(a) PL spectra in pure and atmosphere at a bias voltage of . The inset shows the response of the peak intensity to two pulses of in synthetic air as carrier gas. (b) Response of the PL intensity to introduction of 10% hydrogen in a nitrogen atmosphere for samples with one and five QD layers. The PL intensity was recorded at a fixed detection wavelength near the emission maximum (due to a different size of the QDs the maximum of the PL emission is located at an energy of for the single QD layer).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN quantum dots as optical transducers for chemical sensors