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Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
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10.1063/1.3103210
/content/aip/journal/apl/94/11/10.1063/1.3103210
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103210
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Figures

Image of FIG. 1.
FIG. 1.

(a) SIMS profile of SI GaN grown on a SiC substrate using an AlGaN interlayer. The structure of sample A is the inset. (b) SIMS profile of SI GaN grown on a SiC substrate using a low-pressure GaN interlayer. The structure of sample B is the inset.

Image of FIG. 2.
FIG. 2.

cw power sweep at 10 GHz for a gate HEMT grown on SI GaN with an AlGaN interlayer, demonstrating an output power of 19 W/mm and a PAE of 48% at 78 V drain bias.

Image of FIG. 3.
FIG. 3.

cw dynamic loadline measurement at 4 GHz of the HEMT structure grown on SI GaN with an AlGaN interlayer. Good pinch off and negligible knee walkout are evident. Each dynamic loadline is measured at 3 dB gain compression.

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/content/aip/journal/apl/94/11/10.1063/1.3103210
2009-03-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103210
10.1063/1.3103210
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