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(a) SIMS profile of SI GaN grown on a SiC substrate using an AlGaN interlayer. The structure of sample A is the inset. (b) SIMS profile of SI GaN grown on a SiC substrate using a low-pressure GaN interlayer. The structure of sample B is the inset.
cw power sweep at 10 GHz for a gate HEMT grown on SI GaN with an AlGaN interlayer, demonstrating an output power of 19 W/mm and a PAE of 48% at 78 V drain bias.
cw dynamic loadline measurement at 4 GHz of the HEMT structure grown on SI GaN with an AlGaN interlayer. Good pinch off and negligible knee walkout are evident. Each dynamic loadline is measured at 3 dB gain compression.
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