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Carrier mobility in a polar semiconductor measured by an optical pump-probe technique
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10.1063/1.3103275
/content/aip/journal/apl/94/11/10.1063/1.3103275
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103275
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time derivatives of the transient reflectivity changes for obtained by electro-optic detection at 300 K. The inset shows their FT spectra.

Image of FIG. 2.
FIG. 2.

Three-dimensional images of the electro-optic response obtained by the wavelet analysis. (a) and (b) . The beating pattern observed at is due to the two modes of the LO (8.75 THz) and the mode (7.9 THz).

Image of FIG. 3.
FIG. 3.

(a) Time evolution of the peak intensity of the plasmonlike LOPC mode at 23 THz for , 20 THz for , and 16 THz for . The relaxation time is obtained by the decay curve of the peak intensity. (b) Carrier (electron) mobility extracted from the values of using plotted as the function of the total carrier density. The horizontal dotted line at represents the Hall mobility of GaAs measured without photodoping.

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/content/aip/journal/apl/94/11/10.1063/1.3103275
2009-03-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier mobility in a polar semiconductor measured by an optical pump-probe technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103275
10.1063/1.3103275
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