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Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer
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10.1063/1.3103278
/content/aip/journal/apl/94/11/10.1063/1.3103278
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103278
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of an ELT-PCS. A thin-film LT-GaAs layer with an antenna is bonded onto a Si substrate with epoxy adhesive.

Image of FIG. 2.
FIG. 2.

Experimental setup of broadband terahertz-TDS. Terahertz pulses were emitted from a DAST crystal using a wavelength ultrashort-pulse fiber-based laser. A detector PCS was operated by frequency-doubled ultrashort-pulse laser.

Image of FIG. 3.
FIG. 3.

Terahertz time-domain wave forms (inset) and corresponding Fourier transform spectra. The absorption band of 7–10 THz of the conventional PCS (dotted line) was reduced by replacing it with an ELT-PCS (solid line), except for the sharp absorption at 8 THz.

Image of FIG. 4.
FIG. 4.

Calculated absorption spectra of GaAs due to phonon resonance using handbook data. (Ref. 11) Solid and dotted lines show calculations for GaAs thicknesses of 2 and , respectively. The absorption line and band widths at 10 dB above the bottom of the absorption line are 0.29 and 3.15 THz, respectively. The corresponding widths of experimental data in Fig. 3 are 0.52 and 3.37 THz, respectively.

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/content/aip/journal/apl/94/11/10.1063/1.3103278
2009-03-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103278
10.1063/1.3103278
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